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EDF1AM thru EDF1DM
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast Bridge Rectifier
FEATURES * UL recognition, file number E54214 * Ideal for printed circuit boards * Ultrafast reverse recovery time for high frequency * Applicable for automative insertion * High surge current capability * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications.
1A 50 V to 200 V 50 A 5 A 1.05 V 50 ns 150 C
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Case Style DFM
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM IR VF trr TJ max.
MECHANICAL DATA Case: DFM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Max. average forward output rectified current at TA = 40 C Peak forward surge current single sine-wave superimposed on rated load Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t TJ, TSTG EDF1AM 50 35 50 EDF1BM 100 70 100 1.0 50 10 - 55 to + 150 EDF1CM 150 106 150 EDF1DM 200 140 200 UNIT V V V A A A 2s C
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage drop per diode Maximum reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode Document Number: 88577 Revision: 14-Jan-08 TEST CONDITIONS 1.0 A TA = 25 C TA = 125 C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A SYMBOL VF EDF1AM EDF1BM EDF1CM EDF1DM UNIT V A mA ns 1.05 5.0 1.0 50
IR
trr
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EDF1AM thru EDF1DM
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Typical thermal resistance (1) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads SYMBOL RJA RJL EDF1AM EDF1BM 38 12 EDF1CM EDF1DM UNIT C/W
ORDERING INFORMATION (Example)
PREFERRED P/N EDF1DM-E3/45 UNIT WEIGHT (g) 0.418 PREFERRED PACKAGE CODE 45 BASE QUANTITY 50 DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
1.0 10
Average Forward Output Current (A)
0.75
P.C.B. Mounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads with 0.06" (1.5 mm) Lead Length
Instantaneous Forward Current (A)
60 Hz Resistive or Inductive Load
1
0.5 Capacitive Loads 0.25
0.1 TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 0.01 0.4
IPK /I AV = 5.0 IPK /I AV = 10 IPK /I AV = 20
0 20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (C)
Instantaneous Forward Voltage (V)
Figure 1. Derating Curves Output Rectified Current
Figure 3. Typical Forward Characteristics Per Diode
60
1000
Peak Forward Surge Current (A)
50
Instantaneous Reverse Leakage Current (A)
TJ = 150 C Single Sine-Wave
100
TJ = 125 C
40
30
10
20
1 TJ = 25 C
10
1.0 Cycle
0 1 10 100
0.1 0 20 40 60 80 100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88577 Revision: 14-Jan-08
EDF1AM thru EDF1DM
Vishay General Semiconductor
30 25 20 15 10 5 0
0.1 1 10 100 1000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p
Junction Capacitance (pF)
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24)
0.335 (8.51) 0.320 (8.12)
0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.023 (0.58) 0.018 (0.46) 0.205 (5.2) 0.195 (5.0)
0.080 (2.03) 0.050 (1.27)
0.185 (4.69) 0.150 (3.81)
0.013 (0.33) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6)
0.075 (1.90) 0.055 (1.39)
Document Number: 88577 Revision: 14-Jan-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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